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LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices

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LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices

Place of Origin : China

Brand Name : CRYLINK

Certification : Iso9001

MOQ : 1 Pieces

Price : negotiation

Packaging Details : Carton

Delivery Time : 3-4 weeks

Payment Terms : TT

Supply Ability : 100 pieces /month

Model Number : CRYLINK-LiNbO3 Crystal

Name : LiNbO3(LN)

Crystal structure : trigonal

Space group : R3C

Density : 4.64 g/cm3

Mohs hardness : 5

Optical homogeneity : ~ 5 x 10-5 / cm

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LiNbO3 crystal has been widely used in optical waveguide and optical communication technology because of its excellent electro-optical properties. It is an ideal substrate material for many integrated optoelectronic devices. Because of the large electro-optic coefficient of LiNbO3, the half-wave voltage is low. The electro-optic effect of LiNbO3 crystal is usually used to modulate the optical signal. Electro-optic modulation is divided into longitudinal and transverse, and LiNbO3 is mainly used in transverse modulation. It has been widely used in medium and low power solid-state lasers.

Physical and optical properties

Chemical formula LiNbO3
Crystal structure trigonal
Space group R3C
Density 4.64 g/cm3
Mohs hardness 5
Optical homogeneity ~ 5 x 10-5 / cm
Transparency range 420 5200 nm
Absorption coefficient ~ 0.1 % / cm @ 1064 nm
Refractive indices at 1064 nm ne = 2.146, no = 2.220 @ 1300 nm
ne = 2.156, no = 2.232 @ 1064 nm
ne = 2.203, no = 2.286 @ 632.8 nm
Sellmeier equations (, m) no2 = 4.9048 + 0.11768 / (2 0.04750) 0.0271692
ne2 = 4.5820 + 0.099169 / (2 0.04443) 0.0219502
Thermal expansion coefficient @ 25 °C //a, 2.0 x 10-6 / K
//c, 2.2 x 10-6 / K
Thermal conductivity ~ 5 W/m/K @ 25 °C
Thermal optical coefficient dno/dT = -0.874 x 10-6 / K at 1.4 m
dne/dT = 39.073 x 10-6 / K at 1.4 m

LiNbO3 General specification for Q-Switch

Refractive retardation =Lnr22V/d
Electro-optic coefficients R33=32pm/V
R31=10pm/V
R22=6.8 pm/V
Aperture 4x4mm ~ 9x9mm
Length 15~25mm
Tolerance of size +/-0.1mm
Chamfer <0.5mm x 45°
Accuracy of orientation <5 arc min
Parallelism <10 arc sec
Flatness l/8 at 632.8 nm
Wavefront Distortion <l/4 at 632.8 nm
Extinction Ratio >400:1 @ 633nm, dia 6mm beam

LiNbO3 specification for Optical waveguide

Operating wavelength range 1.525-1.605m
Extinction ratio ＜20dB
Half wave voltage ＜6V
DC bias voltage ＜8V
Input characteristic impedance 50
Light reflection ≤-50dB
Maximum input electric power 20dBm
Maximum input optical power 10-100mW
Storage temperature -40-85℃
Operating temperature -40-70℃

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